Field effect transistor gate dielectric

ABSTRACT

A FIELF EFFECT TRANSISTOR GATE DIELECTRIC ON A MONOCRYSTALLINE SILICON BODY THAT HAS EXCELLENT THRESHOLD STABILITY CHARACTERISTICS, AND IMPROVED DIELETRIC INTEGRITY. THE GATE DIELECTRIC IS A COMPOSITE LAYER HAVING A GENETIC SILICON DIOXIDE LAYER FORMED BY THERMALLY OXIDIZING THE BODY, AND A SECOND CONTIGUOUS OVERLYING LAYER VAPOR DEPOSITED SIO2 LEVELS.

DEFENSIVE PUBHGATIQN UNITED STATES PATENT AND TRADEMARK OFFICE Published at the request of the applicant or owner in accordance with the Notice of Dec. 16, 1969, 869 O.G. 687. The abstracts of Defensive Publication applications are identified by distinctly numbered series and arearranged chronologically. The heading of each abstract indicates the number of pages of specification, including claims and sheets of drawings contained in the application as originally filed. 'lhe files of these applications are available to the public for inspection and reproduction may be purchased for 30 cents a sheet.

I Defensive Publication applicationshave not been examined as to the merits of alleged invention. The Patent and Trademark Ofiice makes no assertion as to the novelty of the disclosed subject matter.

PUBLISHED SEPTEMBER 2, 1975 $58,004 HELD EFFECT TRANSESTOR GATE DEELECTRIC Herbert S. Lehman, William A. I'lisliin, and Benjamin H. Vromen, Ponghiiccpsic, N.Y., assignors to International Business h lachines Corporation, Armonk, N.Y. Continuation of abandoned application Scr. No. 319,585, Dec. 29, 1972. This application Aug. 2, 1974, Ser. No.

Int. Cl. H011 11/14 US. Cl. 357-23 1 Sheet Drawing. 14 Pages Specification IQ is 24 7 22 22B T M V i N 221A Sept. 2, 1975 H. s. LEHMAN EFAL T938,004

FIELD EFFECT TRANSISTOR GATE DIELECTRIC Original Filed Dec. 29, 1.972

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